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Proceedings Paper

Detectivity and dark current analysis for quantum dot photodetectors with Ge/Si
Author(s): Rahaf M. H. Douhan; Andrey P. Kokhanenko; Kirill A. Lozovoy
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Paper Abstract

The work discusses infrared photodetectors with quantum dots of germanium on silicon. The calculation of certain characteristics of detectors such as: dark current and detectivity in several modes: thermal generation mode, generation-recombination mode and background limited performance mode.

Paper Details

Date Published: 11 December 2019
PDF: 5 pages
Proc. SPIE 11322, XIV International Conference on Pulsed Lasers and Laser Applications, 113220P (11 December 2019); doi: 10.1117/12.2553199
Show Author Affiliations
Rahaf M. H. Douhan, National Research Tomsk State Univ. (Russian Federation)
Andrey P. Kokhanenko, National Research Tomsk State Univ. (Russian Federation)
Kirill A. Lozovoy, National Research Tomsk State Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 11322:
XIV International Conference on Pulsed Lasers and Laser Applications
Victor F. Tarasenko; Anton V. Klimkin; Maxim V. Trigub, Editor(s)

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