Share Email Print
cover

Proceedings Paper

Excitation selectivity in model tin-oxo resist: a computational chemistry perspective
Author(s): Jonathan H. Ma; Han Wang; David Prendergast; Andrew Neureuther; Patrick Naulleau
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

In this preliminary computational chemistry study, we report excitation selectivity in a model tin-oxo molecular resist. Upon impact ionization, organic side chains connected to 6-coordinated tin atoms (located near the charge balancing ligands) are preferentially destabilized. Upon electron addition, conversely, side chains connected to 5-coordinated tin atoms (located on the central belt) are destabilized. Inferring from the binding energies, the ionization induced processes likely have a smaller spatial extent than electron attachment induced process.

Paper Details

Date Published: 8 April 2020
PDF: 7 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113231F (8 April 2020); doi: 10.1117/12.2553055
Show Author Affiliations
Jonathan H. Ma, Lawrence Berkeley National Lab. (United States)
Univ. of California, Berkeley (United States)
Han Wang, Lawrence Berkeley National Lab. (United States)
David Prendergast, Lawrence Berkeley National Lab. (United States)
Univ. of California, Berkeley (United States)
Andrew Neureuther, Lawrence Berkeley National Lab. (United States)
Univ. of California, Berkeley (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

© SPIE. Terms of Use
Back to Top
PREMIUM CONTENT
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?
close_icon_gray