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Proceedings Paper

A novel accurate and robust technique in after-etch overlay metrology of 3D-NAND’s memory holes
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Paper Abstract

In this work a novel machine learning algorithm is used to calculate the after etch overlay of the memory holes in a 3DNAND device based on OCD metrology by YieldStar S1375. It is shown that the method can distinguish the overlay signals from the process induced signals in the acquired pupil image and therefore, enables for an overlay metrology approach which is highly robust to process variations. This metrology data is used to characterize and correct the process induced intra-die stress and the DUV scanner application fingerprint.

Paper Details

Date Published: 20 March 2020
PDF: 9 pages
Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 1132522 (20 March 2020); doi: 10.1117/12.2553054
Show Author Affiliations
Yaobin Feng, Yangtze Memory Technologies Co., Ltd. (China)
Dean Wu, Yangtze Memory Technologies Co., Ltd. (China)
Pandeng Xuan, Yangtze Memory Technologies Co., Ltd. (China)
Pavel Izikson, ASML B.V. (Netherlands)
Payne Qi, ASML China (China)
Huanian You, ASML China (China)
Yvon Chai, ASML China (China)
Jan Jitse Venselaar, ASML B.V. (Netherlands)
Giulio Bottegal, ASML B.V. (Netherlands)
Gonzalo Sanguinetti, ASML B.V. (Netherlands)
Bert Verstraeten, ASML B.V. (Netherlands)
Tjitte Nooitgedagt, ASML B.V. (Netherlands)
Babak Mozooni, ASML B.V. (Netherlands)

Published in SPIE Proceedings Vol. 11325:
Metrology, Inspection, and Process Control for Microlithography XXXIV
Ofer Adan; John C. Robinson, Editor(s)

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