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Proceedings Paper

Algebraic model for extremely unlikely resist dissolution events
Author(s): Andrew R. Neureuther; Luke Long; Patrick Naulleau
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Paper Abstract

The inherent local inhomogeneity in a uniformly average distribution of dissolution aiding events is shown through an algebraic model to be the likely source of missing contacts in projection printing in positive photoresist resist. A granular model of dissolution with voxels 1-3% of a contact core volume having Poisson statistics is used to show that a configuration of 5-10 voxels with stochastically low dissolution aiding events can block a resist etch front or polymer disentanglement at nominal exposure conditions. To drive missing contact error rates to 10-13 for 25 nm contacts requires increasing the normal event density by 59% which is 8-9% per decade error rate reduction. In scaling, the event density increases as the inverse of the cube of contact size. For 12 nm contacts an alternating phaseshifting mask may be enabling.

Paper Details

Date Published: 24 March 2020
PDF: 9 pages
Proc. SPIE 11326, Advances in Patterning Materials and Processes XXXVII, 1132607 (24 March 2020);
Show Author Affiliations
Andrew R. Neureuther, Univ. of California, Berkeley (United States)
Luke Long, Univ. of California, Berkeley (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 11326:
Advances in Patterning Materials and Processes XXXVII
Roel Gronheid; Daniel P. Sanders, Editor(s)

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