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Proceedings Paper

Electron-phonon coupling and electron mobility in degenerately doped oxides from first-principles (Conference Presentation)
Author(s): Marco D. Santia; David C. Look; Stefan C. Badescu

Paper Abstract

Recent developments in growing highly n-doped wide bandgap oxides like β-Ga2O3 and more recently ZnGa2O4 hint to important applications, such as transparent electrodes and ohmic contacts. Attempts to interpret the phonon contribution to the measured magnetoconductivity raise fundamental questions on the interplay between the large number of phonon modes in these lattices, electron-phonon scattering, and lattice disorder. Here, we present density functional theory (DFT) modeling of electron-phonon scattering for a wide range of n-carrier concentrations and temperatures in β-Ga2O3 and ZnGa2O4 . The calculated coupling strengths are corroborated with zone-unfolded phonon spectra extrapolated from a series of simulation supercells of different sizes and with calculated dielectric functions. The results provide a first-principles understanding of dominant low-field mobility features suggested by phenomenological models used traditionally for semiconductors with high lattice symmetry.

Paper Details

Date Published: 10 March 2020
Proc. SPIE 11281, Oxide-based Materials and Devices XI, 1128104 (10 March 2020); doi: 10.1117/12.2552953
Show Author Affiliations
Marco D. Santia, Air Force Research Lab. (United States)
National Research Council (United States)
David C. Look, Wright State Univ. (United States)
Stefan C. Badescu, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 11281:
Oxide-based Materials and Devices XI
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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