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Proceedings Paper

GaN nano-porous structures and arrays of nanolasers made by selective area sublimation (Conference Presentation)
Author(s): Benjamin Damilano

Paper Abstract

In this work, we implement a technique of selective area sublimation to shape GaN or GaN/(Ga,In)N layers. The sublimation has a perfect selectivity with the mask material (either SixNy or SiOx) and vertical sidewalls over a depth up to 7 µm are obtained. The mask thickness can be as thin as 1 mono-layer. We apply this technique for the top-down fabrication of several structures: nanoporous GaN and GaN/(Ga,In)N quantum wells, deep nanoholes in GaN and arrays of GaN nanolasers.

Paper Details

Date Published: 10 March 2020
Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800G (10 March 2020);
Show Author Affiliations
Benjamin Damilano, CNRS-CRHEA (France)

Published in SPIE Proceedings Vol. 11280:
Gallium Nitride Materials and Devices XV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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