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Proceedings Paper

Simulation investigation of enabling technologies for EUV single exposure of Via patterns in 3nm logic technology
Author(s): Weimin Gao; Tsann-Bim Chiou; Shih-En Tseng; Pieter Wöltgens; Moyra K. McManus; Nak Seong; Anthony Yen
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Paper Abstract

We explore various resolution enhancement techniques and investigate their patterning benefits for via patterns of the 3-nm logic node using computational lithography. Simulations are performed by the method of source mask optimization (SMO) using the TachyonTM software. Key assessed process parameters include edge placement error (EPE), overlap process window, image NILS, local CD uniformity and NILS depth of focus (nDOF). Simulation results show that the current mask technology employing the standard Ta-based metallic absorber does not offer enough patterning performance for vias of pitch 40 nm and below. SMO results indicate that high-absorption absorbers give a clear improvement in best-focus shift and pattern placement error while phase-shift masks result in a significant increase of NILS and nDOF. EPE improvement of multiple technologies are also investigated. Novel EUV masks together with advanced imaging with low pupil-filling ratio and curvilinear OPC, combined with highresolution and low-roughness resist and enhanced etch process are among the key enabling technologies to extend EUV single patterning to 3-nm logic via layers.

Paper Details

Date Published: 2 April 2020
PDF: 10 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113231L (2 April 2020);
Show Author Affiliations
Weimin Gao, ASML Technology Development Ctr. (United States)
Tsann-Bim Chiou, ASML Technology Development Ctr. (United States)
Shih-En Tseng, ASML Technology Development Ctr. (United States)
Pieter Wöltgens, ASML Technology Development Ctr. (United States)
Moyra K. McManus, ASML Technology Development Ctr. (United States)
Nak Seong, ASML Technology Development Ctr. (United States)
Anthony Yen, ASML Technology Development Ctr. (United States)

Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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