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Proceedings Paper

Modeling photon, electron, and chemical interactions in a model hafnium oxide nanocluster EUV photoresist
Author(s): Patrick L. Theofanis; James M. Blackwell; Marie E. Krysak; Florian Gstrein
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Paper Abstract

Despite years of research and development, the fundamental processes of photoionization, secondary electron generation, recombination, diffusion, and resist switching are poorly understood at the atomic level for EUVL. Multiscale modeling of these physical and chemical processes can provide answers to questions that are difficult or impossible to answer with experiment alone. A modeling pipeline that includes Monte Carlo modeling of photon- and electron-matter interactions, along with density functional theory calculations of chemical switching will be introduced in this proceeding. The Hf4O2(OMc)12 nanocluster resist will be presented as a case study. Photon and secondary electron yields, electron energy and spatial distributions, and a quantum chemical pathway for negative tone switching will be presented. Fundamental learning from studies like this can be used to improve resist design including improving contrast of these materials.

Paper Details

Date Published: 5 May 2020
PDF: 14 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113230I (5 May 2020);
Show Author Affiliations
Patrick L. Theofanis, Intel Corp. (United States)
James M. Blackwell, Intel Corp. (United States)
Marie E. Krysak, Intel Corp. (United States)
Florian Gstrein, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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