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Proceedings Paper

Application of intra-field alignment to reduce wafer-to-wafer variation
Author(s): Jangsun Kim; Seonho Lee; Hyunjun Ha; Boris Habets; Enrico Bellmann; Holger Bald; Tobias Hoeer; Seop Kim
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Paper Abstract

In most leading-edge technologies, first layers usually are more critical than later layers. For some technologies, however, most critical layers are in mid-of line. On such technologies, less advanced equipment is used for first layers. Because such tools are not so stable, the overlay variation must be compensated on advanced tools used for later layers. Wafer-to-wafer variation is typically corrected by wafer alignment. By standard wafer alignment, intra-field variations are usually not corrected. Because of the instability of the older tools, additional marks to compensate intra-field variation were measured on advanced tools. This reduces the wafer-to-wafer variation but causes throughput loss. Therefore, sampling plans were optimized to reduce the number of intra-field marks by 50%. This was verified by run-to-run simulations and experiments.

Paper Details

Date Published: 23 March 2020
PDF: 13 pages
Proc. SPIE 11327, Optical Microlithography XXXIII, 113270V (23 March 2020); doi: 10.1117/12.2552735
Show Author Affiliations
Jangsun Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seonho Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hyunjun Ha, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Boris Habets, Qoniac GmbH (Germany)
Enrico Bellmann, Qoniac GmbH (Germany)
Holger Bald, Qoniac GmbH (Germany)
Tobias Hoeer, Qoniac GmbH (Germany)
Seop Kim, Qoniac Korea Ltd. (Korea, Republic of)

Published in SPIE Proceedings Vol. 11327:
Optical Microlithography XXXIII
Soichi Owa, Editor(s)

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