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Proceedings Paper

Can we make In2O3 and Ga2O3 p-type? (Conference Presentation)
Author(s): Anderson Janotti

Paper Abstract

P-type doping of wide-band-gap oxides such as In2O3 and Ga2O3 would open vast opportunities in device in device design, ranging from transparent contacts for solar cells to high-power transistors. In this presentation we discuss the fundamental difficulties concerning p-type doping in these materials and opportunities offered by forming dilute alloys, with minimum disturbance in structural parameters yet bringing beneficial changes to their electronic structure.

Paper Details

Date Published: 10 March 2020
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Proc. SPIE 11281, Oxide-based Materials and Devices XI, 1128106 (10 March 2020); doi: 10.1117/12.2552728
Show Author Affiliations
Anderson Janotti, Univ. of Delaware (United States)


Published in SPIE Proceedings Vol. 11281:
Oxide-based Materials and Devices XI
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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