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Proceedings Paper • Open Access

High performance UV anti-reflection coating for backthinned CCD and CMOS image sensors
Author(s): Joel Vaillant; Gilles Grand; Yann Lee

Paper Abstract

Backthinning of image sensors is a very well established process for achieving high Quantum Efficiency for high-specification space and science applications. To optimize the QE performance in various spectral bands, the AR coating need to be adjusted. A new multilayer low thickness UV AR coating has been developed by e2v and CEA-Leti with very high transmission at 266 nm and 355 nm laser wavelengths. It is compatible with CCD and CMOS backthinned image sensor process. We describe hereafter the first results obtained on glass and silicon substrates for this AR coating. The manufacturing of backthinned CCD and CMOS image sensors samples is ongoing. This development is supported by Minalogic project (financed by French FUI-DGCIS).

Paper Details

Date Published: 5 September 2019
PDF: 5 pages
Proc. SPIE 10565, International Conference on Space Optics — ICSO 2010, 105655R (5 September 2019); doi: 10.1117/12.2552634
Show Author Affiliations
Joel Vaillant, e2v semiconductors SAS (France)
Gilles Grand, CEA-LETI (France)
Yann Lee, CEA-LETI (France)

Published in SPIE Proceedings Vol. 10565:
International Conference on Space Optics — ICSO 2010
Errico Armandillo; Bruno Cugny; Nikos Karafolas, Editor(s)

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