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Proceedings Paper

MOCVD epitaxy and doping for beta-Ga2O3 and (AlxGa1-x)2O3 (Conference Presentation)
Author(s): Hongping Zhao

Paper Abstract

β-Ga2O3 represents the emerging ultrawide bandgap semiconductor material, having a bandgap of 4.5-4.9 eV and estimated breakdown field of 6-8 MV/cm, promising for power electronic devices and solar blind photodetectors. High quality material growth and fundamental understanding of its ternary alloy (AlxGa1-x)2O3 are still lacking. Metalorganic chemical vapor deposition (MOCVD) growth of β-Ga2O3 and (AlxGa1-x)2O3 are studied with the focus on understanding the effects of growth conditions on the material quality, control of background and n-type doping, as well as transport properties. Record high room temperature and low temperature mobilities have been achieved in MOCVD β-Ga2O3.

Paper Details

Date Published: 10 March 2020
Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810C (10 March 2020); doi: 10.1117/12.2552502
Show Author Affiliations
Hongping Zhao, The Ohio State Univ. (United States)

Published in SPIE Proceedings Vol. 11281:
Oxide-based Materials and Devices XI
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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