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Proceedings Paper

Optical defect inspection solution for EUV stochastics detection
Author(s): Vidyasagar Anantha; Raghav Babulnath; Veikunth Kannan; Garima Sharma; Shubham Kumar; Kaushik Sah; Andrew Cross; Rahul Lakhawat; Hari Pathangi; Peter De Bisschop
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Paper Abstract

Stochastics defect detection has been a topic of intense study by the extreme ultraviolet (EUV) patterning fraternity [1]. A large part of this initial feasibility work has been performed using electron microscope-based systems [1,2]. A limited sample area is imaged using electron microscopes and images are analyzed using offline analysis techniques [1,2]. However, to accurately quantify the stochastics failure rate, the entire area of interest needs to be inspected. Given such large area inspection requirements, automated and high throughput solutions are the need of the hour to enable stochastics quantification in HVM (high volume manufacturing). This paper demonstrates Broadband Plasma optical wafer inspection capability to capture two key defects on EUV layers a) missing contact in contact hole array patterns b) line breaks in line- space pattern.

Paper Details

Date Published: 23 March 2020
PDF: 6 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113231J (23 March 2020); doi: 10.1117/12.2552452
Show Author Affiliations
Vidyasagar Anantha, KLA Corp. (United States)
Raghav Babulnath, KLA Corp. (United States)
Veikunth Kannan, KLA Corp. (India)
Garima Sharma, KLA Corp. (India)
Shubham Kumar, KLA Corp. (India)
Kaushik Sah, KLA Corp. (Belgium)
Andrew Cross, KLA Corp. (United Kingdom)
Rahul Lakhawat, KLA Corp. (India)
Hari Pathangi, KLA Corp. (India)
Peter De Bisschop, IMEC (Belgium)

Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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