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Proceedings Paper

Prediction of EUV stochastic microbridge probabilities by lithography simulations
Author(s): Erik Verduijn; Ulrich Welling; Jiuzhou Tang; Hans-Jürgen Stock; Ulrich Klostermann; Wolfgang Demmerle; Peter De Bisschop
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Paper Abstract

Stochastic defects are a concern in the lithographic processes used for semiconductor manufacturing, particularly for advanced node extreme ultraviolet lithographic processes. Experimentally determining the defect probability for a lithographic process is extremely time-consuming, requiring expensive metrology equipment and generally limited to simple patterns. Defect probability simulations can be beneficial from time and cost perspective and furthermore should be extensible to more complex patterns. As such, being able to accurately predict the defect probability using lithography simulations would be a valuable complementary option. We show the results of a fast simulation-based methodology for predicting defect probabilities based on a continuum lithographic model calibrated to experimental data. The simulation based-results are compared to experimental microbridge defect probability data where we show a good correlation between the two.

Paper Details

Date Published: 23 March 2020
PDF: 9 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113230K (23 March 2020); doi: 10.1117/12.2552236
Show Author Affiliations
Erik Verduijn, Synopsys Belgium NV (Belgium)
Ulrich Welling, Synopsys GmbH (Germany)
Jiuzhou Tang, Synopsys GmbH (Germany)
Hans-Jürgen Stock, Synopsys GmbH (Germany)
Ulrich Klostermann, Synopsys GmbH (Germany)
Wolfgang Demmerle, Synopsys GmbH (Germany)
Peter De Bisschop, IMEC (Belgium)

Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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