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Proceedings Paper

High-performance mode-locked lasers on silicon
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Paper Abstract

In this paper we review our recent progress on high performance mode locked InAs quantum dot lasers that are directly grown on CMOS compatible silicon substrates by solid-source molecular beam epitaxy. Different mode locking configurations are designed and fabricated. The lasers operate within the O-band wavelength range, showing pulsewidth down to 490 fs, RF linewidth down to 400 Hz, and pulse-to-pulse timing jitter down to 6 fs. When the laser is used as a comb source for wavelength division multiplexing transmission systems, 4.1 terabit per second transmission capacity was achieved. Self-mode locking is also investigated both experimentally and theoretically. The demonstrated performance makes those lasers promising light source candidates for future large-scale silicon electronic and photonic integrated circuits (EPICs) with multiple functionalities.

Paper Details

Date Published: 2 March 2020
PDF: 8 pages
Proc. SPIE 11274, Physics and Simulation of Optoelectronic Devices XXVIII, 112741K (2 March 2020); doi: 10.1117/12.2552224
Show Author Affiliations
Songtao Liu, Univ. of California, Santa Barbara (United States)
Xinru Wu, Univ. of California, Santa Barbara (United States)
Justin Norman, Univ. of California, Santa Barbara (United States)
Daehwan Jung, Univ. of California, Santa Barbara (United States)
KIST (Korea, Republic of)
Mario Dumont, Univ. of California, Santa Barbara (United States)
Chen Shang, Univ. of California, Santa Barbara (United States)
Yating Wan, Univ. of California, Santa Barbara (United States)
M.J. Kennedy, Univ. of California, Santa Barbara (United States)
Bozhang Dong, Institut Polytechnique de Paris (France)
Dominik Auth, Technische Univ. Darmstadt (Germany)
Stefan Breuer, Technische Univ. Darmstadt (Germany)
Frédéric Grillot, Institut Polytechnique de Paris (France)
Ctr. for High Technology Materials (United States)
Weng Chow, Sandia National Labs. (United States)
Arthur Gossard, Univ. of California, Santa Barbara (United States)
John Bowers, Univ. of California, Santa Barbara (United States)


Published in SPIE Proceedings Vol. 11274:
Physics and Simulation of Optoelectronic Devices XXVIII
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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