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Proceedings Paper

Comparison of 850 nm VCSEL oxide aperture designs
Author(s): Niels Heermeier; Marcin Gębski; Nasibeh Haghighi; Philip Moser; Ping-Show Wong; Majid Riaziat; James A. Lott
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Paper Abstract

We design, produce, characterize, and compare 850 nm vertical cavity surface emitting lasers (VCSELs) with one and two oxide aperture layers, and with cavity optical thicknesses of 0.5λ and 1.5λ. We process five VCSEL wafers side by side with varying oxide aperture diameters from about 4 to 16 m and perform on-wafer static and dynamic testing. From optical output power-current-voltage characteristics we extract and compare threshold currents, differential series resistances, and wall plug efficiencies. We measure the dynamic 2-port scattering parameters (S11 and S21) to determine the small signal modulation frequency response of the VCSEL and the combined VCSEL and photodetector optical link. By extracting and comparing the D-factor, modulation current efficiency factor, -3 dB bandwidth, and resistanceinductance- capacitance (RLC) circuit elements we find only a small difference in the static and dynamic performance characteristics of the five VCSEL designs, with slightly higher bandwidth for the half-lambda cavity VCSELs with two top oxide apertures.

Paper Details

Date Published: 24 February 2020
PDF: 10 pages
Proc. SPIE 11300, Vertical-Cavity Surface-Emitting Lasers XXIV, 113000J (24 February 2020);
Show Author Affiliations
Niels Heermeier, Technische Univ. Berlin (Germany)
Marcin Gębski, Technische Univ. Berlin (Germany)
Lodz Univ. of Technology (Poland)
Nasibeh Haghighi, Technische Univ. Berlin (Germany)
Philip Moser, Technische Univ. Berlin (Germany)
Ping-Show Wong, OEpic Semiconductors Inc. (United States)
Majid Riaziat, OEpic Semiconductors Inc. (United States)
James A. Lott, Technische Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 11300:
Vertical-Cavity Surface-Emitting Lasers XXIV
Luke A. Graham; Chun Lei, Editor(s)

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