Share Email Print

Proceedings Paper

Focusing on nanoparticles-based photomultiplier in n-CARs
Author(s): Satinder K. Sharma; Mohamad G. Moinuddin; Midathala Yogesh; Shivani Sharma; Manoj Sahani; Subrata Ghosh; Kenneth E. Gonsalves
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

To meet the International Roadmap for Device and Systems (IRDS), the development of an advanced lithography process for next-generation (NG) technology node is a vital and challenging task, as we are reaching to its physical limits. In the progress of high volume manufacturing (HVM) at sub-12 nm node, it is very important that resist materials should possess low line edge roughness (LER) and high sensitivity (E0) using extreme ultraviolet (EUV) and its analogous exposure systems. Apart from standard chemically amplified resist (CAR), acid-free non-CAR has been studied immensely as a potential candidate for NG patterning. To achieve sub-12 nm patterns, a complete study for newly developed n-CAR is required to make sure that developed resist formulation is performing optimally. Aside from the n-CARs, we adopted a novel patterning approach using He+ ion beam lithography with less proximity effect. Here we present the metallic nanoparticle photo-multiplier (high optical density materials for λ ~13.5 nm) embedded with n-CAR for better photo-absorption and high-resolution pattern development. The silver (Ag- OD 12 w.r.t Carbon) nanoparticles (NPs) with ~2 nm regime were embedded into MAPDST homo-polymer ((4-(methacryloyloxy)phenyl) dimethylsulfonium trifluoromethanesulfonate). To investigate the high-resolution patterning synthesized photoresist was exposed to e-beam (Ee) and Helium ion (EHe) beam lithography. The patterned samples were developed in aqueous solution and revealed the negative tone with the sensitivity of 172 μC/cm2 and 50.4 μC/cm2 for Ee and EHe respectively. The MAPDST-Ag resist found stable for more than 1 year, which clearly suggests that there is no sign of Ag-NPs agglomeration in the formulation. Thence, evidently, prove the considerable shelf life of developed resist formulation and can be used in NG semiconductor device HVM and other electronic device applications.

Paper Details

Date Published: 23 March 2020
PDF: 9 pages
Proc. SPIE 11326, Advances in Patterning Materials and Processes XXXVII, 113261C (23 March 2020);
Show Author Affiliations
Satinder K. Sharma, Indian Institute of Technology Mandi (India)
Mohamad G. Moinuddin, Indian Institute of Technology Mandi (India)
Midathala Yogesh, Indian Institute of Technology Mandi (India)
Shivani Sharma, Indian Institute of Technology Mandi (India)
Manoj Sahani, Indian Institute of Technology Mandi (India)
Subrata Ghosh, Indian Institute of Technology Mandi (India)
Kenneth E. Gonsalves, Indian Institute of Technology Mandi (India)

Published in SPIE Proceedings Vol. 11326:
Advances in Patterning Materials and Processes XXXVII
Roel Gronheid; Daniel P. Sanders, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?