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Proceedings Paper

Infiltration synthesis of hybrid nanocomposite resists for advanced nanolithography
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Paper Abstract

We demonstrate a simple ex-situ inorganic infiltration route for transforming standard organic resists into high-performance positive tone hybrid resist platform. A model thin film PMMA-AlOx hybrid resist system has been synthesized by hybridization of PMMA with AlOx and investigated for electron beam lithography. The approach possesses full controllability of the resist performance in terms of critical does, patterning contrast reaching up to 30 and etch resistance for plasma-based pattern transfer processes. The high selectivity Si etching capability demonstrated using a low-temperature cryo-Si etch process, based on the controlled infiltration outperforms commercial resists and typical hard mask material thermal SiO2, with estimated achievable selectivity in excess of ~300. Si nanostructures down to ~30 nm with aspect ratio up to ~17 are also transferred into the Si substrate. Easy implementation and adaptability for different inorganic infiltrations, this platform is well capable of potentially delivering the resist performance and throughput necessary for EUV lithography.

Paper Details

Date Published: 23 March 2020
PDF: 7 pages
Proc. SPIE 11326, Advances in Patterning Materials and Processes XXXVII, 113260J (23 March 2020); doi: 10.1117/12.2552164
Show Author Affiliations
Nikhil Tiwale, Brookhaven National Lab. (United States)
Ashwanth Subramanian, Stony Brook Univ. (United States)
Kim Kisslinger, Brookhaven National Lab. (United States)
Ming Lu, Brookhaven National Lab. (United States)
Jiyoung Kim, Univ. of Texas at Dallas (United States)
Aaron Stein, Brookhaven National Lab. (United States)
Chang-Yong Nam, Brookhaven National Lab. (United States)
Stony Brook Univ. (United States)


Published in SPIE Proceedings Vol. 11326:
Advances in Patterning Materials and Processes XXXVII
Roel Gronheid; Daniel P. Sanders, Editor(s)

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