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Proceedings Paper

Accelerated optimization of multilayer trench etches using model-based experimental design
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Paper Abstract

As the critical dimensions (CDs) of etch profiles continue to decrease, precise control of plasma etch processing becomes increasingly important. Achieving this control requires optimizing etch recipes, which is time consuming and expensive as an extensive amount of experiments must be performed. Here we present a method for the prediction of process windows to achieve target CDs for high aspect ratio trenches using model-based experimental design. A reduced-order model of the physics and chemistry of the etch is used to identify the best experiments to perform to calibrate the model. The model is then used to efficiently explore the process parameter space to identify the largest ranges of process parameters that achieve desired ranges of CDs. The methodology is practically demonstrated on a three-step trench etch through three layers of material consisting of spin-on-glass, spin-on-carbon and silicon. It is found that this physics-model based method requires less than half as many experiments to identify the optimal etch recipe than full-factorial design of experiments.

Paper Details

Date Published: 25 March 2020
PDF: 7 pages
Proc. SPIE 11329, Advanced Etch Technology for Nanopatterning IX, 113290Z (25 March 2020); doi: 10.1117/12.2552156
Show Author Affiliations
Kara Kearney, SandBox Semiconductor (United States)
Sonali Chopra, SandBox Semiconductor (United States)
Xilan Zhu, SandBox Semiconductor (United States)
Yang Ban, SandBox Semiconductor (United States)
Roger T. Bonnecaze, SandBox Semiconductor (United States)
Meghali C. Chopra, SandBox Semiconductor (United States)


Published in SPIE Proceedings Vol. 11329:
Advanced Etch Technology for Nanopatterning IX
Richard S. Wise; Catherine B. Labelle, Editor(s)

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