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Proceedings Paper

EUV photoresist reference metrology using TEM tomography
Author(s): Mark Biedrzycki; Umesh Adiga; Andrew Barnum; Alain Mousa; Jason Arjavac; Rose Marie Haynes; Anne-Laure Charley; Phillipe Leray; Dmitry Batuk
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Paper Abstract

Process monitoring of extreme ultraviolet (EUV) photoresist requires critical dimension analysis and careful control of extracted parameters like line edge roughness (LER) and line width roughness (LWR). Automated SEM metrology typically provides estimates for these parameters, including critical dimensions and “shape, ” but at the cost of SEM exposure modifying the shape and size of the material systems. A method for acquiring and analyzing dense line structures using TEM tomography is proposed. Automation of the process from in-fab photoresist encapsulation through dual-beam lamella preparation to tomography acquisition is described, followed by a discussion of novel methods for volumetric reconstruction with metrology. Measurement capabilities are compared to CDSEM and AFM. Novel three-dimensional constructs illustrating process and property relationships in the lithography module are provided.

Paper Details

Date Published: 20 March 2020
PDF: 10 pages
Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113251T (20 March 2020); doi: 10.1117/12.2552139
Show Author Affiliations
Mark Biedrzycki, Thermo Fisher Scientific (United States)
Umesh Adiga, Thermo Fisher Scientific (United States)
Andrew Barnum, Thermo Fisher Scientific (United States)
Alain Mousa, IMEC (Belgium)
Jason Arjavac, Thermo Fisher Scientific (United States)
Rose Marie Haynes, Thermo Fisher Scientific (United States)
Anne-Laure Charley, IMEC (Belgium)
Phillipe Leray, IMEC (Belgium)
Dmitry Batuk, IMEC (Belgium)


Published in SPIE Proceedings Vol. 11325:
Metrology, Inspection, and Process Control for Microlithography XXXIV
Ofer Adan; John C. Robinson, Editor(s)

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