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Proceedings Paper

A new approach to removing H atoms in hydrogen depassivation lithography
Author(s): S. O. Reza Moheimani; Hamed Alemansour
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Paper Abstract

Hydrogen deppasivation lithography (HDL) carried out by a scanning tunneling microscope (STM) is used to make patterns of Si dimers on a hydrogen passivated silicon surface. In this paper we discuss a new STM mode of operation that is highly suitable for removing single H atoms from the surface. This is made possible by changes we have made to the STM feedback control system that allows the STM to remove hydrogen atoms without switching the operational mode from imaging to lithography. Employing this method can potentially reduce the chance of tip-sample crash and increase the lithography precision.

Paper Details

Date Published: 23 March 2020
PDF: 6 pages
Proc. SPIE 11324, Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020, 113240Y (23 March 2020); doi: 10.1117/12.2552138
Show Author Affiliations
S. O. Reza Moheimani, The Univ. of Texas at Dallas (United States)
Hamed Alemansour, The Univ. of Texas at Dallas (United States)


Published in SPIE Proceedings Vol. 11324:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020
Martha I. Sanchez; Eric M. Panning, Editor(s)

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