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Proceedings Paper

Development of planarizing spin-on carbon materials for high-temperature processes
Author(s): Runhui Huang; Xing-Fu Zhong; Jakub Koza; Boyu Zhang; Gu Xu; Sean Simmons
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Paper Abstract

Multilayer lithography is used for advanced semiconductor processes to pattern complex structures. As more and more procedures incorporate a high-temperature process, such as chemical vapor deposition (CVD), the need for thermally stable materials increases. For certain applications, a spin-on carbon (SOC) layer under the CVD layer is required to survive through a high-temperature process. Additionally, these materials are sometimes desired to planarize the underlying topography. Designing organic films that have high-temperature stability while also allowing for good planarization is a challenge. Rigid polymers are typically very stable, but planarizing materials are normally highly flexible, so the trade-off between properties has to be carefully designed. The materials presented in this paper are stable up to 500°C, soluble in the solvents commonly used in the semiconductor industry, provide void-free fill in high-aspect trenches, and have excellent planarization properties. The coated film has very low shrinkage through the bake temperature and is stable at high-temperature conditions. The planarization on topography in the range from local distance (a few microns), to global distance (a few hundred microns) is equivalent to our best low-temperature SOC.

Paper Details

Date Published: 23 March 2020
PDF: 7 pages
Proc. SPIE 11326, Advances in Patterning Materials and Processes XXXVII, 113261O (23 March 2020); doi: 10.1117/12.2552128
Show Author Affiliations
Runhui Huang, Brewer Science, Inc. (United States)
Xing-Fu Zhong, Brewer Science, Inc. (United States)
Jakub Koza, Brewer Science, Inc. (United States)
Boyu Zhang, Brewer Science, Inc. (United States)
Gu Xu, Brewer Science, Inc. (United States)
Sean Simmons, Brewer Science, Inc. (United States)


Published in SPIE Proceedings Vol. 11326:
Advances in Patterning Materials and Processes XXXVII
Roel Gronheid; Daniel P. Sanders, Editor(s)

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