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Proceedings Paper

Exploring patterning limit and enhancement techniques to improve printability of 2D shapes at 3nm node
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Paper Abstract

In this paper, we are proposing different techniques to enhance the printability of 2D shapes at 3nm node of Block/Cut shapes in self-Aligned Multi-patterning approaches. Multiple directions such as OPC optimization, fragmentation optimization, tagging, optimization of 2D shapes dimensions, controlling the direction of movement of OPC mask edges, using skew edges and more approaches are used to meet the printability specs of 3 nm node. In addition, a complete study to define the best dimensions to 2D junction of block/cut shape and its distance from metal line has been conducted. The results are evaluated based on the resulted EPE and PVBand. We managed to reach EPE< 1nm and PVBand < 3nm (IMEC specs at 3nm node).

Paper Details

Date Published: 23 March 2020
PDF: 12 pages
Proc. SPIE 11328, Design-Process-Technology Co-optimization for Manufacturability XIV, 113280F (23 March 2020);
Show Author Affiliations
Rehab Kotb, Mentor Graphics Egypt (Egypt)
Ahmed Hamed-Fatehy, Mentor Graphics Egypt (Egypt)
James Word, Mentor, a Siemens Business (United States)


Published in SPIE Proceedings Vol. 11328:
Design-Process-Technology Co-optimization for Manufacturability XIV
Chi-Min Yuan, Editor(s)

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