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Proceedings Paper

Extending EUV lithography for DRAM applications
Author(s): Gijsbert Rispens; Claire Van Lare; Dorothe Oorschot; Rik Hoefnagels; Shih-Hsiang Liu; Willem Van Mierlo; Nadia Zuurbier; Zoi Dardani; Ziyang Wang; Mark John Maslow; Jo Finders; Roberto Fallica; Andreas Frommhold; Eric Hendrickx; Ardavan Niroomand; Scott Light
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Paper Abstract

In this paper we show experimental verification of the feasibility of printing pitch 40x70nm hexagonal holes using EUV single patterning. We show that at a local CDU (LCDU) of 2.7nm and an exposure dose of 54 mJ/cm2 a defect rate smaller than 7x10-9 is observed. This result was enabled by optimization of the illumination source and improvements in the resist. Resist selection identified multiple candidates that show a promising LCDU performance and optimization of the processing conditions resulted in improved performance. Experimental validation of the defect performance was done using HMI eP5 on the baseline process. Assessment of the LCDU performance for EUV single expose at pitches beyond 40x70nm, showed promising results.

Paper Details

Date Published: 12 May 2020
PDF: 8 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113230U (12 May 2020); doi: 10.1117/12.2552067
Show Author Affiliations
Gijsbert Rispens, ASML Netherlands B.V. (Netherlands)
Claire Van Lare, ASML Netherlands B.V. (Netherlands)
Dorothe Oorschot, ASML Netherlands B.V. (Netherlands)
Rik Hoefnagels, ASML Netherlands B.V. (Netherlands)
Shih-Hsiang Liu, ASML Netherlands B.V. (Netherlands)
Willem Van Mierlo, ASML Netherlands B.V. (Netherlands)
Nadia Zuurbier, ASML Netherlands B.V. (Netherlands)
Zoi Dardani, ASML Netherlands B.V. (Netherlands)
Ziyang Wang, ASML Netherlands B.V. (Netherlands)
Mark John Maslow, ASML Netherlands B.V. (Netherlands)
Jo Finders, ASML Netherlands B.V. (Netherlands)
Roberto Fallica, IMEC (Belgium)
Andreas Frommhold, IMEC (Belgium)
Eric Hendrickx, IMEC (Belgium)
Ardavan Niroomand, Micron Technology, Inc. (United States)
Scott Light, Micron Technology, Inc. (United States)


Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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