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Proceedings Paper

Resistless EUV lithography: patterning with EUV-induced surface reactions (Conference Presentation)
Author(s): Li-Ting Tseng; Dimitrios Kazazis; Procopios Constantinou; Taylor Stock; Neil Curson; Steven Schofield; Gabriel Aeppli; Yasin Ekinci

Paper Abstract

In this work, we present a novel resistless patterning technique on hydrogen-terminated Si (100) using EUV-induced surface reaction. We has successfully demonstrated a direct Si pattern transfer of half-pitch 75 nm Si gratings using the EUV resistless patterning technique. The EUV-induced surface reactions could achieve direct patterning on functionalized Si surface and potentially overcome the resolution limitations of conventional photoresists in the semiconductor industry. Moreover, this approach can be used for better understanding of EUV exposure mechanisms by preparing simple molecular systems and studying the EUV-induced reactions.

Paper Details

Date Published: 24 March 2020
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113231M (24 March 2020); doi: 10.1117/12.2552059
Show Author Affiliations
Li-Ting Tseng, Paul Scherrer Institut (Switzerland)
Dimitrios Kazazis, Paul Scherrer Institut (Switzerland)
Procopios Constantinou, Univ. College London (United Kingdom)
Taylor Stock, Univ. College London (United Kingdom)
Neil Curson, Univ. College London (United Kingdom)
Steven Schofield, Univ. College London (United Kingdom)
Gabriel Aeppli, Paul Scherrer Institut (Switzerland)
ETH Zurich (Switzerland)
Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Yasin Ekinci, Paul Scherrer Institut (Switzerland)

Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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