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Proceedings Paper

Plasma process of Silicon Germanium alloy: molecular dynamics simulation study (Conference Presentation)
Author(s): Hojin Kim; Yun Han; Mingmei Wang; Andrew Metz; Peter Biolsi

Paper Abstract

We performed molecular dynamics (MD) simulation to study the evaluation of silicon germanium alloy (SiGe) damage with oxidation behavior after plasma gas treatments. Our study provides a fundamental understanding of the atomistic/ molecular level of SiGe behavior after plasma etching of a contact etch stop layer (CESL). We found that simulation results are very good agreement with experimental data from Secondary ion mass spectroscopy (SIMS) and Transmission Electron Microscope (TEM)/ Energy-dispersive X-ray spectroscopy (EDS) and the detailed atom and bond analysis are obtained to study the surface reaction during the plasma process

Paper Details

Date Published: 24 March 2020
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Proc. SPIE 11329, Advanced Etch Technology for Nanopatterning IX, 1132908 (24 March 2020); doi: 10.1117/12.2552039
Show Author Affiliations
Hojin Kim, TEL Technology Ctr., America, LLC (United States)
Yun Han, TEL Technology Ctr., America, LLC (United States)
Mingmei Wang, TEL Technology Ctr., America, LLC (United States)
Andrew Metz, TEL Technology Ctr., America, LLC (United States)
Peter Biolsi, TEL Technology Ctr., America, LLC (United States)


Published in SPIE Proceedings Vol. 11329:
Advanced Etch Technology for Nanopatterning IX
Richard S. Wise; Catherine B. Labelle, Editor(s)

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