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Proceedings Paper

Challenges in the patterning of RRAM devices for analog computing applications (Conference Presentation)

Paper Abstract

Emerging memory technologies such as Resistive Memory (RRAM) have gained a lot of attention to meet the requirements of a potential analog computing element, due to its non-volatile characteristics, scalability and energy efficiency. An RRAM device typically consists of a resistive switching layer (e.g. HfO2) sandwiched between two metal electrodes. Since oxygen vacancies are critical to the functioning of the device, it is desirable to achieve residue free etching using oxygen-less plasmas, and preferably minimize exposure to ambient environment. In this work, we discuss the RRAM patterning challenges and their impact on the device characteristics including the switching/forming voltage.

Paper Details

Date Published: 24 March 2020
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Proc. SPIE 11329, Advanced Etch Technology for Nanopatterning IX, 113290N (24 March 2020); doi: 10.1117/12.2552035
Show Author Affiliations
Iqbal Saraf, IBM (United States)
Shyam Sridhar, TEL Technology Ctr., America, LLC (United States)
Christopher Catano, TEL Technology Ctr., America, LLC (United States)
Sergey Voronin, TEL Technology Ctr., America, LLC (United States)
Dexin Kong, IBM Thomas J. Watson Research Ctr. (United States)
Soon-Cheon Seo, IBM Corp. (United States)
Youngseok Kim, IBM Thomas J. Watson Research Ctr. (United States)
Takashi Ando, IBM Corp. (United States)
Nicole Saulnier, IBM Thomas J. Watson Research Ctr. (United States)
Vijay Narayanan, IBM Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 11329:
Advanced Etch Technology for Nanopatterning IX
Richard S. Wise; Catherine B. Labelle, Editor(s)

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