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Proceedings Paper

Impact of flare on source mask optimization in EUVL for 7nm technology node
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Paper Abstract

In EUV lithography, the short wavelength and residual mirror surface roughness increase the flare levels across the slit. As a key research point, the flares of different exposure fields are carefully discussed by numerical simulation. To ensure the effectiveness and practicability of our simulations, the test patterns are generated according to the general design rules for 7nm technology node. The NILS, process variation band (PVB) and MEEFs from mask optimizations and source mask optimizations (SMO) results are compared. From the comparisons, the constant flare has a greater influence on NILS and PVB than that on MEEF. In contrast, the flare map caused more reduction on the MEEF values.

Paper Details

Date Published: 23 March 2020
PDF: 10 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113232E (23 March 2020);
Show Author Affiliations
Lisong Dong, Institute of Microelectronics (China)
Rui Chen, Institute of Microelectronics (China)
Taian Fan, Institute of Microelectronics (China)
Rongbo Zhao, Institute of Microelectronics (China)
Univ. of Chinese Academy of Sciences (China)
Yayi Wei, Institute of Microelectronics (China)
Univ. of Chinese Academy of Sciences (China)
Jianjun Jia, Synopsys Inc. (United States)
Zac Levinson, Synopsys Inc. (United States)
Thuc Dam, Synopsys, Inc. (United States)
Jay Lee, Synopsys, Inc. (United States)
Yongdong Wang, Synopsys, Inc. (United States)
Larry Melvin, Synopsys, Inc. (United States)

Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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