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Proceedings Paper

Establishing a sidewall image transfer chemo-epitaxial DSA process using 193 nm immersion lithography
Author(s): G. J. Rademaker; A. Le Pennec; T. J. Giammaria; K. Benotmane; H. Pham; C. Bouet; M. G. Gusmao Cacho; M. Argoud; M.-L. Pourteau; A. Paquet; A. Gharbi; C. Navarro; C. Nicolet; X. Chevalier; K. Sakavuyi; P. Nealey; R. Tiron
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Paper Abstract

Directed Self-Assembly (DSA) of Block Copolymers (BCP) by chemo-epitaxial alignment is a promising high resolution lithography technique compatible with CMOS high-volume manufacturing. It allows overcoming limitations in resolution and local stochasticity by conventional, imaging based, lithography. However, for BCP with pitches below 20 nm and guide patterning by immersion lithography (193i), multiplication factors ≥ 4 become necessary, imposing stringent requirements on the guides and defectivity becomes hard to control. The Arkema-CEA (ACE) process flow overcomes this limit by creating the guides by a self-aligned double patterning (SADP) process flow, followed by the deposition of a cross-linkable neutral mat and selective grafting of the guides. This paper reports on the transfer of the process flow to immersion lithography, details challenges encountered in process optimization, notably the dependence of the wetting of the neutral layer on the surface energy and the morphology of the spacers. Last, the paper presents a metrology and defectivity roadmap combined with preliminary, promising results.

Paper Details

Date Published: 3 April 2020
PDF: 12 pages
Proc. SPIE 11326, Advances in Patterning Materials and Processes XXXVII, 113260Z (3 April 2020); doi: 10.1117/12.2552003
Show Author Affiliations
G. J. Rademaker, Univ. Grenoble Alpes, CEA-LETI (France)
A. Le Pennec, Univ. Grenoble Alpes, CEA-LETI (France)
T. J. Giammaria, Univ. Grenoble Alpes, CEA-LETI (France)
K. Benotmane, Univ. Grenoble Alpes, CEA-LETI (France)
H. Pham, Univ. Grenoble Alpes, CEA-LETI (France)
C. Bouet, Univ. Grenoble Alpes, CEA-LETI (France)
M. G. Gusmao Cacho, Univ. Grenoble Alpes, CEA-LETI (France)
M. Argoud, Univ. Grenoble Alpes, CEA-LETI (France)
M.-L. Pourteau, Univ. Grenoble Alpes, CEA-LETI (France)
A. Paquet, Univ. Grenoble Alpes, CEA-LETI (France)
Arkema France (France)
A. Gharbi, Univ. Grenoble Alpes, CEA-LETI (France)
C. Navarro, Arkema France (France)
C. Nicolet, Arkema France (France)
X. Chevalier, Arkema France (France)
K. Sakavuyi, Brewer Science (United States)
P. Nealey, The Univ. of Chicago (United States)
R. Tiron, Univ. Grenoble Alpes, CEA-LETI (France)


Published in SPIE Proceedings Vol. 11326:
Advances in Patterning Materials and Processes XXXVII
Roel Gronheid; Daniel P. Sanders, Editor(s)

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