Share Email Print

Proceedings Paper

Defect mitigation of chemo-epitaxy DSA patterns
Author(s): Makoto Muramatsu; Takanori Nishi; Yasuyuki Ido; Takahiro Kitano
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Directed self-assembly (DSA) is one of the candidates for next generation lithography. Over the past years, many papers and presentation have been reported regarding DSA, and Tokyo Electron Limited (TEL is a registered trademark or a trademark of Tokyo Electron Limited in Japan and /or other countries.) also has presented the evaluation results and the advantages of each1-9. Especially, the chemo-epitaxy process has advantages for the sub 20nm line & space patterns to apply to active area patterns for DRAM, fin patterns for Logic and narrow pitch of metal patterns. One of the biggest advantages of DSA lines is that the pattern pitch is decided by the specific factors of the block copolymer, and it achieves the small pitch walking as a consequence. In this paper, the latest results regarding the defect reduction work regarding chemo-epitaxy line & space pattern is reported. And, sub-10nm process flow without using high-chi BCP is discussed.

Paper Details

Date Published: 23 March 2020
PDF: 8 pages
Proc. SPIE 11326, Advances in Patterning Materials and Processes XXXVII, 113260Y (23 March 2020);
Show Author Affiliations
Makoto Muramatsu, Tokyo Electron Kyushu Ltd. (Japan)
Takanori Nishi, Tokyo Electron Kyushu Ltd. (Japan)
Yasuyuki Ido, Tokyo Electron Kyushu Ltd. (Japan)
Takahiro Kitano, Tokyo Electron Ltd. (Japan)

Published in SPIE Proceedings Vol. 11326:
Advances in Patterning Materials and Processes XXXVII
Roel Gronheid; Daniel P. Sanders, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?