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Proceedings Paper

Improved device overlay by litho aberration tracking with novel target design for DRAM
Author(s): Xiaolei Liu; Eitan Hajaj; Alon Volfman; Hedvi Spielberg; Yoav Grauer; Raviv Yohanan; Xindong Gao
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Paper Abstract

For today’s advanced processes, in order to achieve higher optical lithography resolution, some of the layers require extreme dipole illumination conditions. One example is the modern DRAM process, where numerous critical layers are patterned with extreme dipole scanner illumination. Conventional (both imaging-based and diffraction-based) overlay marks on such layers typically use horizontal or vertical lines that suffer from insufficient accuracy in overlay device tracking. The new Diagonal AIM (DAIM™) overlay mark mimics the actual device through the usage of tilted structures. Significant improvement in device overlay tracking was demonstrated using the DAIM overlay mark.

Paper Details

Date Published: 20 March 2020
PDF: 5 pages
Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113252R (20 March 2020);
Show Author Affiliations
Xiaolei Liu, KLA Corp. (China)
Eitan Hajaj, KLA Corp. (Israel)
Alon Volfman, KLA Corp. (Israel)
Hedvi Spielberg, KLA Corp. (Israel)
Yoav Grauer, KLA Corp. (Israel)
Raviv Yohanan, KLA Corp. (Israel)
Xindong Gao, KLA Corp. (China)


Published in SPIE Proceedings Vol. 11325:
Metrology, Inspection, and Process Control for Microlithography XXXIV
Ofer Adan; John C. Robinson, Editor(s)

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