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Proceedings Paper

EUV chemically amplified resist component distribution and efficiency for stochastic defect control
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Paper Abstract

In this work, we connected the analytical determination of the EUV Dill C parameter for different photodecomposable base quencher (PDB) architectures using a standard addition method, the influence of the underlying hardmask on postdevelop EUV resist residue formation, and the vertical PAG and PDB concentration profile throughout the depth of the film determined by GCIB-TOF-SIMS for a model EUV resist system. The collected experimental data was used to feed a resist patterning simulation engine, in order to understand the additive effect of component distribution and efficiency on EUV stochastics and its potential impact on defect control. Our results unveiled a link between PDB quantum yield and nanoscopic material distribution uniformity. In parallel, a differentiating behavior was observed among inorganic underlayers: metal oxide hardmasks (HMs) invariably induced more resist residue than non-metallic HMs. Last, a specific example of joint PAG and PDB concentration depletion at the resist-substrate interface was related to a potential increase in microbridge defectivity as a result of poor stochastic counts.

Paper Details

Date Published: 23 March 2020
PDF: 15 pages
Proc. SPIE 11326, Advances in Patterning Materials and Processes XXXVII, 1132609 (23 March 2020); doi: 10.1117/12.2551967
Show Author Affiliations
Dario L. Goldfarb, IBM T. J. Watson Research Ctr. (United States)
Olivia Wang, IBM Systems (United States)
Conor R. Thomas, IBM Systems (United States)
Heather Polgrean, IBM Systems (United States)
Margaret C. Lawson, IBM T. J. Watson Research Ctr. (United States)
Alexander E. Hess, IBM Almaden Research Ctr. (United States)
Anuja De Silva, IBM Research - Albany Nanotech (United States)


Published in SPIE Proceedings Vol. 11326:
Advances in Patterning Materials and Processes XXXVII
Roel Gronheid; Daniel P. Sanders, Editor(s)

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