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Proceedings Paper

Probability prediction of EUV process failure due to resist-exposure stochastic: applications of Gaussian random fields excursions and Rice's formula
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Paper Abstract

The methods to calculate the probability of success/failure of EUV lithography (EUVL) processes are presented. The success of an EUVL process is defined as a complete removal of the resist material within one set of designated volumes and a complete retention of the resist material within another set of designated volumes in the resist film. We demonstrate that, under certain assumptions, the probability calculation reduces to the well-known problem of calculation of probability of excursion of a certain Gaussian random field. The methods to calculate the probability of success/failure of a lithographic process are presented, including the Monte-Carlo methods, methods based on factorization of a covariance matrix, methods based on Mahalanobis distance, and the methods using Rice’s formula and its variations. A particular attention is paid to the methods applicable to full chip OPC and OPC verification. The results from the proposed methods are tested in simulations and by comparison with experimental data.

Paper Details

Date Published: 23 March 2020
PDF: 25 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113230L (23 March 2020); doi: 10.1117/12.2551965
Show Author Affiliations
Azat Latypov, Mentor Graphics Corp. (United States)
Gurdaman Khaira, Mentor Graphics Corp. (United States)
Germain Fenger, Mentor Graphics Corp. (United States)
John Sturtevant, Mentor Graphics Corp. (United States)
Chih-I Wei, Mentor Graphics Corp. (Belgium)
Peter De Bisschop, IMEC (Belgium)


Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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