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Proceedings Paper

Contour based metrology: “make measurable what is not so"
Author(s): Bertrand Le-Gratiet; Régis Bouyssou; Julien Ducoté; Alain Ostrovsky; Charlotte Beylier; Christian Gardin; Nivea Schuch; Vincent Annezo; Loïc Schneider; Matthieu Millequant; Paolo Petroni; Thiago Figueiro; Patrick Schiavone
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Paper Abstract

Galileo Galilei once quoted: “Measure what is measurable, and make measurable what is not so”. In silicon manufacturing R&D phase, it often happens that engineers would like to access some parameter values that are not easy, even impossible to measure. When looking at a CDSEM image, the parameters of interest seem easy to extract but in practice getting access to them in a robust and reliable way is not always simple. Developing a contour-based metrology tool coupling robust contour extraction with a comprehensive contour metrology environment could help to bridge this gap. In previous works, it has been shown that SEM images contain significant amounts of information that can be extracted and analyzed using efficient contour extraction and analysis toolboxes [1, 2]. Also, the concept of implementing remote contour-based metrology has been introduced. The present work continues to unveil what can be achieved with such solutions. For that, the example of implant layers’ process assumption will be explored. During this process step, counter doping problems can occur for example when the distance between layers deviates from nominal. Therefore, it is crucial for design rule control to measure some critical dimensions such as minimum distance between layers, corner rounding, slope, etc. However, given the characteristics of the different structures in the images, which may come from different layers and/or processes steps, the measurements are not straightforward to extract with standard CDSEM metrology algorithms. Moreover, recipes are complex to setup, measurements by themselves are not very stable, and usually an indirect determination of the key figure is performed. In this paper, we will show that multilayer contour-based metrology, mixing image contour and GDS layout, allows to overcome the previously mentioned difficulties, as well as to generate measurements that are not possible to be performed by using standard algorithms.

Paper Details

Date Published: 27 March 2020
PDF: 11 pages
Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 1132505 (27 March 2020); doi: 10.1117/12.2551907
Show Author Affiliations
Bertrand Le-Gratiet, STMicroelectronics (France)
Régis Bouyssou, STMicroelectronics (France)
Julien Ducoté, STMicroelectronics (France)
Alain Ostrovsky, STMicroelectronics (France)
Charlotte Beylier, STMicroelectronics (France)
Christian Gardin, STMicroelectronics (France)
Nivea Schuch, Aselta Nanographics (France)
Vincent Annezo, Aselta Nanographics (France)
Loïc Schneider, Aselta Nanographics (France)
Matthieu Millequant, Aselta Nanographics (France)
Paolo Petroni, Aselta Nanographics (France)
Thiago Figueiro, Aselta Nanographics (France)
Patrick Schiavone, Aselta Nanographics (France)

Published in SPIE Proceedings Vol. 11325:
Metrology, Inspection, and Process Control for Microlithography XXXIV
Ofer Adan; John C. Robinson, Editor(s)

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