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Proceedings Paper

Application of alternative developer solutions for EUV lithography
Author(s): Julius Joseph Santillan; Masahiko Harumoto; Harold Stokes; Chisayo Mori; Yuji Tanaka; You Arisawa; Tomohiro Motono; Masaya Asai; Toshiro Itani
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Paper Abstract

The application / effect of alternative developers for resist-based pattern defect mitigation was investigated. It was found that compared to the standard aqueous 0.26N TMAH developer solution, the same developer at lower concentration effectively improve the defect margin (indicated here in the form of a defect-sensitive exposure latitude (ELX) and critical dimension margin (CDMX) metric). Moreover, the existence of a developer concentration low limit, where ELX and CDMX significantly decrease, was observed. Alternative developers TEAH, TPAH and TBAH, when adjusted to the most effective developer concentration were found to improve defect margin. These results show the advantages of pursuing optimal developer solutions in mitigating resist-based defects while maintaining lithographic performance.

Paper Details

Date Published: 23 March 2020
PDF: 7 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113231W (23 March 2020);
Show Author Affiliations
Julius Joseph Santillan, Osaka Univ. (Japan)
Masahiko Harumoto, SCREEN Semiconductor Solutions Co., Ltd. (Japan)
Harold Stokes, SCREEN SPE Germany GmbH (Germany)
Chisayo Mori, SCREEN Semiconductor Solutions Co., Ltd. (Japan)
Yuji Tanaka, SCREEN Semiconductor Solutions Co., Ltd. (Japan)
You Arisawa, SCREEN Semiconductor Solutions Co., Ltd. (Japan)
Tomohiro Motono, SCREEN Semiconductor Solutions Co., Ltd. (Japan)
Masaya Asai, SCREEN Semiconductor Solutions Co., Ltd. (Japan)
Toshiro Itani, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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