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Proceedings Paper

Progress in EUV resists status towards high-NA EUV lithography
Author(s): Xiaolong Wang; Li-Ting Tseng; Timothee Allenet; Iacopo Mochi; Michaela Vockenhuber; Chia-Kai Yeh; Lidia van Lent-Protasova; Jara Garcia Santaclara; Rolf Custers; Yasin Ekinci
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Paper Abstract

High-NA extreme ultraviolet lithography (EUVL) is going to deliver the high-volume manufacturing (HVM) patterning for sub-3nm technology node for the semiconductor industry. One of the critical challenges is to develop suitable EUV photoresists at high resolution with high sensitivity and low line-width roughness (LWR) at reduced film thickness needed for high-NA by its reduced depth of focus (~1/NA2). The resist performance is generally limited by the resolution-LWR sensitivity (RLS) tradeoff, and it is critical to find new materials to support the future lithography nodes. EUV interference lithography (EUV-IL) is a powerful and efficient technique to test new materials at high resolution. In this work, we evaluate the performance of about 120 EUV resists, including molecular resist, inorganic resist, chemically-amplified resist (CAR), and chemically-amplified resist with a metal sensitizer (metal-CAR). Among all tested resists, we selected and compared six resists with the best performance in dose-to-size, line-width roughness, and maximal exposure latitude for 16 nm and 14 nm half-pitch (HP) lines/spaces (LS). A molecular resist showed the lowest dose to resolve HP 16 nm (29 mJ/cm2) and 14 nm (31 mJ/cm2), still featuring low LWRunbiased (2.7 nm and 3.1 nm, respectively). We observed that there is steady progress in EUV resist development: the LWR of the resists was improved in comparison with the results of the last two years as we noted that the amount of the resists within given dose and LWR threshold increased from 10 % to 33% for HP 14 nm. For contact holes, CAR gave the lowest LCDU of 2.2 nm for HP 20 nm with the lowest doses (21.1 mJ/cm2). While inorganic resists resolved pillars with highest resolution HP down to 18 nm with LCDU of 2.1 nm.

Paper Details

Date Published: 4 May 2020
PDF: 11 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113230C (4 May 2020); doi: 10.1117/12.2551886
Show Author Affiliations
Xiaolong Wang, Paul Scherrer Institut (Switzerland)
Li-Ting Tseng, Paul Scherrer Institut (Switzerland)
Timothee Allenet, Paul Scherrer Institute (Switzerland)
Iacopo Mochi, Paul Scherrer Institut (Switzerland)
Michaela Vockenhuber, Paul Scherrer Institut (Switzerland)
Chia-Kai Yeh, Paul Scherrer Institut (Switzerland)
Lidia van Lent-Protasova, ASML Netherlands B.V. (Netherlands)
Jara Garcia Santaclara, ASML Netherlends B.V. (Netherlands)
Rolf Custers, ASML Netherlands B.V. (Netherlands)
Yasin Ekinci, Paul Scherrer Institut (Switzerland)

Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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