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Proceedings Paper

Rigorous stochastic lithography modelling for defectivity reduction in EUV single expose patterning (Conference Presentation)
Author(s): Ulrich Welling

Paper Abstract

Finding a process window and improving the yield for EUV single exposure nodes requires an understanding of stochastic defects. Stochastic simulations can be used as a tool to understand the influence of the process on defectivity. This presentation introduces stochastic model calibration with the purpose of matching lithographic observables. The validity of this approach will be shown based on comparison of measured defectivity data and matching stochastic simulations.

Paper Details

Date Published: 24 March 2020
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 1132318 (24 March 2020); doi: 10.1117/12.2551876
Show Author Affiliations
Ulrich Welling, Synopsys GmbH (Germany)

Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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