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Proceedings Paper

High-accuracy, high-speed, and smart metrology in the EUV era
Author(s): Zhigang Wang; Kei Sakai; Yasushi Ebizuka; Masumi Shirai; Makoto Suzuki
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Paper Abstract

As a follow-up to last year’s “What is prevalent CD-SEM's role in EUV era?” [1], here we report our ongoing progress on total metrology solutions for the sub-10-nm extreme ultraviolet (EUV) lithography process. We discuss two technical approaches that have emerged following our previous work. First, similar to conventional minimization processes, we focus on improvements in the top metrology task, down-to-ångström-order tool matching, namely, “atomic matching”, which is a crucially important feature in all in-line metrology tools in the EUV era. Second, we examine a comprehensive solution that enables EUV-characterized featured process monitoring with greater accuracy, higher speed, and smarter metrology.

Paper Details

Date Published: 30 March 2020
PDF: 9 pages
Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113251Q (30 March 2020); doi: 10.1117/12.2551868
Show Author Affiliations
Zhigang Wang, Hitachi High-Tech Corp. (Japan)
Kei Sakai, Hitachi High-Tech Corp. (Japan)
Yasushi Ebizuka, Hitachi High-Tech Corp. (Japan)
Masumi Shirai, Hitachi High-Tech Corp. (Japan)
Makoto Suzuki, Hitachi High-Tech Corp. (Japan)


Published in SPIE Proceedings Vol. 11325:
Metrology, Inspection, and Process Control for Microlithography XXXIV
Ofer Adan; John C. Robinson, Editor(s)

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