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Proceedings Paper

Compact resist model using single convolution kernel
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Paper Abstract

Lithography simulation is an essential technique for today's semiconductor manufacturing process. Although several rigorous models have been proposed, these methods are time-consuming. In order to calculate a full chip in realistic time, a fast and accurate resist model is essential. This paper proposes a new compact resist model using an arbitrary convolution kernel. The convolution formula can be described as a system of linear equations, therefore, we can determine the convolution kernel by solving the system of linear equations. However, it is hard to find the effective solution, because it is an ill-posed linear inverse problem due to the measurement constraints. Therefore, the key point of our method is how to solve the ill-posed linear inverse problem. In this paper, we explain the details and effectiveness of our method.

Paper Details

Date Published: 23 March 2020
PDF: 7 pages
Proc. SPIE 11327, Optical Microlithography XXXIII, 113270H (23 March 2020);
Show Author Affiliations
Taiki Kimura, Kioxia Corp. (Japan)
Tetsuaki Matsunawa, Kioxia Corp. (Japan)
Shoji Mimotogi, Kioxia Corp. (Japan)

Published in SPIE Proceedings Vol. 11327:
Optical Microlithography XXXIII
Soichi Owa, Editor(s)

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