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Proceedings Paper

Strategies for aggressive scaling of EUV multi-patterning to sub-20 nm features
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Paper Abstract

As future patterning processes reach the limit of lithographic printability, continuous innovation in mandrel trim or shrink strategies are required to reach sub-20 nm line-space patterning. Growing concerns of lithography defectivity, mask selectivity, line edge roughness (LER), line width roughness (LWR), and critical dimension uniformity (CDU) present significant challenges towards this goal. The authors compare various alternative mandrel trim strategies to highlight potential solutions and drawbacks towards enabling successful printing of mandrels used in extreme ultraviolet (EUV) multi-patterning schemes. Through this comparison, the authors demonstrate the challenges of maintaining adequate pattern transferability while keeping aspect ratio-driven line roughness and material selectivity under control. By process partitioning, the limitations of traditional lithography and etch trimming strategies are highlighted, suggesting the need for new methods of CD reduction after the pattern has been transferred. These new trimming methods offer flexibility in CD control without negatively impacting the mandrel profile and demonstrates better tunability across different material sets, allowing for evaluation of different mask and mandrel material combinations for downstream process optimization.

Paper Details

Date Published: 6 April 2020
PDF: 12 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113230V (6 April 2020);
Show Author Affiliations
Ashim Dutta, IBM Research (United States)
Jennifer Church, IBM Research (United States)
Joe Lee, IBM Research (United States)
Brendan O’Brien, IBM Research (United States)
Luciana Meli, IBM Research (United States)
Chi Chun Liu, IBM Research (United States)
Saumya Sharma, IBM Research (United States)
Karen Petrillo, IBM Research (United States)
Cody Murray, IBM Research (United States)
Eric Liu, TEL Technology Ctr. (United States)
Katie Lutker-Lee, TEL Technology Ctr. (United States)
Qiaowei Lou, TEL Technology Ctr. (United States)
Chris Cole, TEL Technology Ctr. (United States)
Angélique Raley, TEL Technology Ctr. (United States)
Akiteru Ko, TEL Technology Ctr. (United States)
Subhadeep Kal, TEL Technology Ctr. (United States)
Jake Kaminsky, TEL Technology Ctr. (United States)
Aelan Mosden, TEL Technology Ctr. (United States)
Henan Zhang, TEL Technology Ctr. (United States)
Shan Hu, TEL Technology Ctr. (United States)
Lior Huli, TEL Technology Ctr. (United States)
Naoki Shibata, TEL Technology Ctr. (United States)
Dave Hetzer, TEL Technology Ctr. (United States)
Chia-Yun (Sharon) Hsieh, TEL Technology Ctr. (United States)


Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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