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Proceedings Paper

IR focal planes based on GaInSb/InAs superlattices
Author(s): Richard H. Miles; Jerry A. Wilson
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Paper Abstract

Infrared detectors based on GaInSb/InAs strained layer superlattices promise focal plane arrays spanning the infrared. Response uniformity and operating temperature are projected to be superior to those of long-wavelength HgCdTe devices, without the low quantum efficiencies of multi- quantum well devices. Operation of such superlattice-based mid- and long-wave infrared detectors has been demonstrated, with zero bias impedances approaching the HgCdTe trend line and high quantum efficiencies. Two color, back-to-back diodes have also been demonstrated for the first time, in a p-n-p triple layer heterojunction. Various passivation approaches have been compared.

Paper Details

Date Published: 22 October 1996
PDF: 8 pages
Proc. SPIE 2816, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices, (22 October 1996); doi: 10.1117/12.255170
Show Author Affiliations
Richard H. Miles, Hughes Research Labs. (United States)
Jerry A. Wilson, Santa Barbara Research Ctr. (United States)

Published in SPIE Proceedings Vol. 2816:
Infrared Detectors for Remote Sensing: Physics, Materials, and Devices
Randolph E. Longshore; Jan W. Baars, Editor(s)

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