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Proceedings Paper

Improving EUV underlayer coating defectivity using Point-Of-Use filtration
Author(s): Aiwen Wu; Hareen Bayana; Philippe Foubert; Andrea Chacko; Douglas Guererro
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Paper Abstract

Extreme ultraviolet (EUV) lithography has gained momentum towards high-volume manufacturing (HVM) as the method of choice for sub-20 nm half-pitch device fabrication. Optimized EUV photoresists and an improved understanding of the EUV patterning mechanisms have made significant progress toward achieving improved resolution, line-width roughness (LWR), and sensitivity. In addition, introducing a thin EUV underlayer (UL) into the regular EUV materials stack enhances the overall performance of EUV resists and opens the process window. As with all other spin-on photochemicals, utilizing filtration at the point-of-dispense can effectively reduce coating defects of the EUV underlayer material.

In this paper, we will describe our efforts to leverage different filtration parameters, including retention ratings and membrane materials, to understand their impact on EUV underlayer coating defects, and will present the characterization of coating defects in very thin films.

Paper Details

Date Published: 23 March 2020
PDF: 8 pages
Proc. SPIE 11326, Advances in Patterning Materials and Processes XXXVII, 113261Z (23 March 2020); doi: 10.1117/12.2551647
Show Author Affiliations
Aiwen Wu, Entegris, Inc. (United States)
Hareen Bayana, Entegris GmbH (Germany)
Philippe Foubert, imec (Belgium)
Andrea Chacko, Brewer Science, Inc. (United States)
Douglas Guererro, Brewer Science, Inc. (United States)

Published in SPIE Proceedings Vol. 11326:
Advances in Patterning Materials and Processes XXXVII
Roel Gronheid; Daniel P. Sanders, Editor(s)

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