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Proceedings Paper

CLEAN TRACK solutions for defectivity and CD control towards 5 nm and smaller nodes
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Paper Abstract

Although being progressively introduced to mass production, extreme ultraviolet (EUV) lithography still faces major challenges for 5nm and smaller nodes due to the impact of stochastic and processing failures, resulting in very narrow defect process windows. 1 These failures are strongly linked to critical dimension (CD) variations.2 Therefore, careful control of CD is now directly linked to defect reduction in addition to more conventional in-film particles/developer residues reduction. Photoresist profiles are also believed to be one possible limiting factor and improvements via collapse control or increased resist mask thickness for etch transfer need to be considered. In this paper, most recent understandings regarding defect process window limitations and optimization of processes to further enable narrow pitch EUV lithography will be presented.

Paper Details

Date Published: 23 March 2020
PDF: 12 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113232A (23 March 2020); doi: 10.1117/12.2551627
Show Author Affiliations
Arnaud Dauendorffer, Tokyo Electron Kyushu Ltd. (Japan)
Takahiro Shiozawa, Tokyo Electron Kyushu Ltd. (Japan)
Keisuke Yoshida, Tokyo Electron Kyushu Ltd. (Japan)
Noriaki Nagamine, Tokyo Electron Kyushu Ltd. (Japan)
Yuya Kamei, Tokyo Electron Kyushu Ltd. (Japan)
Shinichiro Kawakami, Tokyo Electron Kyushu Ltd. (Japan)
Satoru Shimura, Tokyo Electron Kyushu Ltd. (Japan)
Kathleen Nafus, Tokyo Electron Kyushu Ltd. (Japan)
Akihiro Sonoda, Tokyo Electron Kyushu Ltd. (Japan)
Philippe Foubert, IMEC (Belgium)

Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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