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Proceedings Paper

EUV photo resist shrink characterization using low landing energy SEM (Conference Presentation)
Author(s): Shimon Levi

Paper Abstract

This study explores SEM induced shrink on EUV resist at different SEM scanning conditions from traditional to low landing energies. Measurement results of different targets, constant space of 28 nm and different pitches, across FEM wafer demonstrate both charging and resist shrink impact on measurement sensitivity and uncertainty. AFM measurements, SEM vs fresh locations are performed to quantify 3D morphology changes of the EUV pattern.

Paper Details

Date Published: 24 March 2020
Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113251S (24 March 2020); doi: 10.1117/12.2551624
Show Author Affiliations
Shimon Levi, Applied Materials Israel, Ltd. (Israel)

Published in SPIE Proceedings Vol. 11325:
Metrology, Inspection, and Process Control for Microlithography XXXIV
Ofer Adan; John C. Robinson, Editor(s)

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