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Proceedings Paper

Machine learning and hybrid metrology using HV-SEM and optical methods to monitor channel hole tilting in-line for 3D NAND wafer production
Author(s): Michael Meng; Leeming Tu; Jian Mi; Haydn Zhou; Xi Zou
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Paper Abstract

Tilted channel holes affect final yield significantly in High Aspect Ratio (HAR) 3D NAND memory wafer processing. An in-line measurement method is developed to use machine learning that utilizes the spectra from optical metrology to map Tilt-X and Tilt-Y. Reliable reference is provided by high voltage SEM. Results show that the correlation of optical and HV e-Beam measurements has R2 more than 0.92. In addition, measurement throughput is improved tremendously by 40% from e-Beam to optical metrology. Combined with other optical metrology on the same platform (thickness, and Optical CD), this method is much efficient for in-line tilt measurement after channel hole etch process.

Paper Details

Date Published: 20 March 2020
PDF: 7 pages
Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113250O (20 March 2020); doi: 10.1117/12.2551622
Show Author Affiliations
Michael Meng, Yangtze Memory Technologies Co., Ltd. (China)
Leeming Tu, Yangtze Memory Technologies Co., Ltd. (China)
Jian Mi, Yangtze Memory Technologies Co., Ltd. (China)
Haydn Zhou, Yangtze Memory Technologies Co., Ltd. (China)
Xi Zou, Nanometrics Inc. (United States)


Published in SPIE Proceedings Vol. 11325:
Metrology, Inspection, and Process Control for Microlithography XXXIV
Ofer Adan; John C. Robinson, Editor(s)

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