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Proceedings Paper

3D-NAND wafer process monitoring using high voltage SEM with auto e-beam tilt technology
Author(s): Leeming Tu; Jian Mi; Henry Fan; Haydn Zhou; Felix Xiong; Louis Tu; Gangyi Chen; Chuanyu Shao; Long Zhang; Shinji Kubo
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Paper Abstract

An auto e-beam tilt technology was used to measure bottom critical dimensions (CD) of High-Aspect Ratio (HAR) contact holes. Results show that traditional Scanning Electron Microscope (SEM) is not capable of catching bottom information, such as bending structures. A new method with hardware and software has been developed to first find the best angle to detect bottom electron signals with high acceleration voltage and then synthesize with multi-angle electron signals. By using this method, accurate bottom CD as well as the angle and direction of bended hole can be measured automatically. It is very effective for inline metrology of HAR 3D structure in semiconductor wafer processing.

Paper Details

Date Published: 20 March 2020
PDF: 8 pages
Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113250L (20 March 2020);
Show Author Affiliations
Leeming Tu, Yangtze Memory Technologies Co., Ltd. (China)
Jian Mi, Yangtze Memory Technologies Co., Ltd. (China)
Henry Fan, Yangtze Memory Technologies Co Ltd. (China)
Haydn Zhou, Yangtze Memory Technologies Co., Ltd. (China)
Felix Xiong, Yangtze Memory Technologies Co., Ltd. (China)
Louis Tu, Yangtze Memory Technologies Co., Ltd. (China)
Gangyi Chen, Hitachi High-Technologies Corp. (China)
Chuanyu Shao, Hitachi High-Technologies Corp. (Japan)
Long Zhang, Hitachi High-Technologies Corp. (Japan)
Shinji Kubo, Hitachi High-Technologies Corp. (Japan)


Published in SPIE Proceedings Vol. 11325:
Metrology, Inspection, and Process Control for Microlithography XXXIV
Ofer Adan; John C. Robinson, Editor(s)

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