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Proceedings Paper

High-NA EUV lithography exposure tool: program progress
Author(s): Jan Van Schoot; Eelco van Setten; Kars Troost; Sjoerd Lok; Judon Stoeldraijer; Rudy Peeters; Jos Benschop; Joerg Zimmerman; Paul Graeupner; Lars Wischmeier; Peter Kuerz; Winfried Kaiser
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Paper Abstract

While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are entering high volume manufacturing, ASML and ZEISS are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. The intent of this high-NA scanner, targeting a resolution of 8nm, is to extend Moore’s law throughout the next decade. The high-NA optical system, together with the developments in mask and resist, provides an increased contrast, key to control stochastic contributions to EPE and error rate of printing defects. A novel lens design, capable of providing the required NA, has been identified; this lens will be paired with new, faster stages and more accurate sensors enabling the tight focus and overlay control needed for future process nodes. Impact on system architecture and proposed solutions are described in this paper. In addition, we give a status update on the developments at ZEISS and ASML.

Paper Details

Date Published: 23 March 2020
PDF: 10 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 1132307 (23 March 2020); doi: 10.1117/12.2551491
Show Author Affiliations
Jan Van Schoot, ASML Netherlands B.V. (Netherlands)
Eelco van Setten, ASML Netherlands B.V. (Netherlands)
Kars Troost, ASML Netherlands B.V. (Netherlands)
Sjoerd Lok, ASML Netherlands B.V. (Netherlands)
Judon Stoeldraijer, ASML Netherlands B.V. (Netherlands)
Rudy Peeters, ASML Netherlands B.V. (Netherlands)
Jos Benschop, ASML Netherlands B.V. (Netherlands)
Joerg Zimmerman, ASML (Netherlands)
Paul Graeupner, Carl Zeiss SMT GmbH (Germany)
Lars Wischmeier, Carl Zeiss SMT GmbH (Germany)
Peter Kuerz, Carl Zeiss SMT GmbH (Germany)
Winfried Kaiser, Carl Zeiss SMT GmbH (Germany)


Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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