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Proceedings Paper

Fundamental characterization of stochastic variation for improved single-expose EUV patterning at aggressive pitch
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Paper Abstract

With aggressive scaling of single-expose EUV lithography to the sub-7 nm node, stochastic variations play a prominent role in defining the lithographic process window. Fluctuations in photon shot noise, absorption and subsequent chemical reactions can lead to stochastic failure, directly impacting electrical yield. Fundamental characterization of the mode and magnitude of these variations is required to define the threshold for failure. In this work, a complementary series of techniques is enlisted to probe the nature and modulation of stochastic variation in single exposure EUV patterning. Unbiased line edge roughness (LER), local critical dimension uniformity (LCDU) and defect inspection techniques are employed to monitor the frequency of stochastic variations leading to failures in line/space and via patterning. Using this methodology, we explore the modulation of stochastic variations by different photoresists and illuminations, with emphasis on material and process down-selection for improved yield at the sub-7 nm node.

Paper Details

Date Published: 23 March 2020
PDF: 9 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113230O (23 March 2020); doi: 10.1117/12.2551487
Show Author Affiliations
Jennifer Church, IBM Semiconductor Research (United States)
Luciana Meli, IBM Semiconductor Research (United States)
Jing Guo, IBM Semiconductor Research (United States)
Martin Burkhardt, IBM Research (United States)
Chris Mack, Fractilia, LLC (United States)
Anuja DeSilva, IBM Semiconductor Research (United States)
Karen Petrillo, IBM Semiconductor Research (United States)
Mary Breton, IBM Semiconductor Research (United States)
Ravi Bonam, IBM Semiconductor Research (United States)
Romain Lallement, IBM Semiconductor Research (United States)
Eric Miller, IBM Semiconductor Research (United States)
Brad Austin, IBM Semiconductor Research (United States)
Shravan Matham, IBM Semiconductor Research (United States)
Nelson Felix, IBM Semiconductor Research (United States)


Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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