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Proceedings Paper

High-Z metal-based underlayer patterning for improving EUV stochastics (Conference Presentation)

Paper Abstract

Extending extreme ultraviolet (EUV) single exposure patterning to its limits is dependent on eliminating its stochastic defectivity. Along with developments in photoresist platforms, the patterning film stack also needs to be considered. The material immediately underneath the photoresist is expected to have significant impact on both lithographic and pattern transfer performance. By designing the resist substrate interface with high EUV absorbance, there is potential to increase the EUV quantum yield of the exposure process. Increasing the selectivity to organic layer offers the opportunity to modulate stochastic defects through etch strategies. This paper will demonstrate the patterning of various chemically amplified resists on a high-Z metal-based hardmask. The potential for dose reduction, higher etch selectivity, and defectivity improvement from a high-Z hardmask will be discussed. Deposition-trim etch techniques will be used for decreasing the transfer of stochastic defects to the underlying substrate. Sub-32nm pitch trench patterning, defectivity, and electrical yield for this patterning stack will be highlighted.

Paper Details

Date Published: 24 March 2020
PDF
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113230M (24 March 2020); doi: 10.1117/12.2551319
Show Author Affiliations
Anuja De Silva, IBM Research - Almaden (United States)
Jennifer Church, IBM Thomas J. Watson Research Ctr. (United States)
Dominik Metzler, IBM Thomas J. Watson Research Ctr. (United States)
Luciana Meli, IBM Thomas J. Watson Research Ctr. (United States)
Nelson M. Felix, IBM Thomas J. Watson Research Ctr. (United States)
Phil Friddle, Lam Research Corp. (United States)
Bhaskar Nagabhirava, Lam Research Corp. (United States)
Siva Kanakasabapathy, Lam Research Corp. (United States)
Rich Wise, Lam Research Corp. (United States)


Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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