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Proceedings Paper

Investigation of the surface electronic structure of bulk ZnGa2O4 (Conference Presentation)

Paper Abstract

We present a combined experimental and theoretical investigation on the surface electronic structure of truly bulk ZnGa2O4, a transparent conducting oxide with an ultra-wide band gap of 4.6 eV. Angle-resolved photoelectron spectroscopy, X-ray photoelectron spectroscopy and low-energy electron diffraction were used to analyze the electronic band structure, band bending and surface reconstruction respectively. In combination with density functional theory, the experimental results will be discussed to provide the very first insights on the surface electronic properties of ZnGa2O4, to motivate future investigations.

Paper Details

Date Published: 10 March 2020
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Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810V (10 March 2020); doi: 10.1117/12.2551056
Show Author Affiliations
Felix Reichmann, IHP GmbH (Germany)
Jaroslaw Dabrowski, IHP GmbH (Germany)
Zbigniew Galazka, Leibniz-Institut für Kristallzüchtung (Germany)
Wolfgang M. Klesse, IHP GmbH (Germany)
Mattia Mulazzi, Humboldt-Univ. zu Berlin (Germany)


Published in SPIE Proceedings Vol. 11281:
Oxide-based Materials and Devices XI
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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